A III-V Group Tunnel FETs with Good Switching Characteristics and their Circuit Performance Journal title: International Journal of Electronics Communication and Computer Technology Authors: Bhargav K. Mamilla| Department of Electrical Engineering IIT KanpurKanpur, India mbhargav.404@gmail.... Subject(s): Computer and Information Science, Engineering
High Performance Germanium Double Gate N-MOSFET Journal title: International Journal of Modern Engineering Research (IJMER) Authors: Akshat Singh Subject(s):
Improving Analog Performance and Suppression of Subthreshold Swing using Hetero-Junction Less Double Gate Tunnel FETs Journal title: International Journal of Trend in Scientific Research and Development Authors: Subject(s): Biological Sciences, Computer and Information Science, Engineering, Mathematics, Agricultural Engineering, Management, Engineering, Multidisciplinary